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NP82N04PUG
ELECTRICAL CHARACTERISTICS (T A = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
I DSS
I GSS
TEST CONDITIONS
V DS = 40 V, V GS = 0 V
V GS = ± 20 V, V DS = 0 V
MIN.
TYP.
MAX.
1
± 100
UNIT
μ A
nA
Gate to Source Threshold Voltage
Note
Forward Transfer Admittance
Note
V GS(th)
| y fs |
V DS = V GS , I D = 250 μ A
V DS = 10 V, I D = 41 A
2.0
20
3.0
41
4.0
V
S
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Note
R DS(on)
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q G
Q GS
Q GD
V GS = 10 V, I D = 41 A
V DS = 25 V
V GS = 0 V
f = 1 MHz
V DD = 20 V, I D = 41 A
V GS = 10 V
R G = 0 ?
V DD = 32 V
V GS = 10 V
I D = 82 A
2.7
6500
580
370
39
102
67
13
106
29
35
3.5
9750
870
670
90
260
140
40
160
m ?
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = 82 A, V GS = 0 V
I F = 82 A, V GS = 0 V
di/dt = 100 A/ μ s
0.9
43
51
1.5
V
ns
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
PG.
D.U.T.
R G = 25 ?
50 ?
L
V DD
PG.
D.U.T.
R G
R L
V DD
V GS
Wave Form
V GS
0
10%
V GS
90%
V GS = 20 → 0 V
V DS
90%
90%
V DD
I D
I AS
BV DSS
V DS
V GS
0
τ
V DS
Wave Form
V DS
0
t d(on)
10%
t r
10%
t d(off)
t f
Starting T ch
τ = 1 μ s
Duty Cycle ≤ 1%
t on
t off
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = 2 mA
R L
2
PG.
50 ?
V DD
Data Sheet D16858EJ1V0DS
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